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Lattice Site Location of Group VII Impurities in Silicon

Published online by Cambridge University Press:  25 February 2011

D.O. Boerma ,
P.J.M. Smulders  and
T.S. Wierenga
D.O. Boerma
Affiliation:
L.A.N. and Materials Science Centre, University of Groningen, Westersingel 34, 9718 CM Groningen, The Netherlands
P.J.M. Smulders
Affiliation:
L.A.N. and Materials Science Centre, University of Groningen, Westersingel 34, 9718 CM Groningen, The Netherlands
T.S. Wierenga
Affiliation:
L.A.N. and Materials Science Centre, University of Groningen, Westersingel 34, 9718 CM Groningen, The Netherlands
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Abstract

Chlorine- and iodine-implanted silicon have been investigated using the channeling/RBS technique after laser and oven annealing. Both annealing methods result in good epitaxial recrystallization of the implanted layer. A large near-substitutional I fraction exceeding 90% was found after oven annealing at 875°C. The near-substitutional fractions found after laser annealing for Cl and I, and after thermal annealing at 900°C for Cl are in the order of 50% only. The precise lattice site for these Cl and I fractions are determined by fitting the angular scans with simulated results. The results are interpreted in terms of vacancy association.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 259
Copyright
Copyright © Materials Research Society 1984

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References

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