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Lateral Confinement of Silicide Layers Synthesized with High Dose Implantation and Annealing

Published online by Cambridge University Press:  21 February 2011

Alice E. White ,
K. T. Short ,
S. D. Berger ,
H. A. Huggins  and
D. Loretto
Alice E. White
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. D. Berger
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
H. A. Huggins
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. Loretto
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Using mesotaxy, a technique which involves high dose implantation followed by high temperature annealing, we have created narrow wires of CoSi2 buried beneath the surface of a silicon wafer. The implantation masks are fabricated directly on the silicon substrate using high resolution electron beam lithography in combination with reactive ion etching. TEM analysis shows that the wires are single-crystal and oriented with the substrate with very abrupt interfaces. The electrical continuity of the wires has been confirmed with electron-beam-induced current measurements.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 223
Copyright
Copyright © Materials Research Society 1989

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References

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