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Laser-Induced Formation of Thin TiO2 Films from TiC14 and Oxygen an a Silicon Surface.

Published online by Cambridge University Press:  28 February 2011

Tomoji Kawai ,
Takahiro Choda  and
Shichio Kawai
Tomoji Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University Mihogaoka, Ibaraki, Osaka 567, Japan
Takahiro Choda
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University Mihogaoka, Ibaraki, Osaka 567, Japan
Shichio Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University Mihogaoka, Ibaraki, Osaka 567, Japan
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Abstract

A uniform thin TiO2 film with the rutile structure which is usually made at higher than 700°C, can be formed at room temperature by the laser irradiation of adsorbed TiCl4 followed by oxidation and repeated cycles of this procedure on a silicon(100) single crystal surface. The laser irradiation to gaseous mixture of TiCl4 and oxygen from the direction parallel or perpendicular to the substrate, on the other hand, leads to the formation of a TiO2 film consisting of amorphous fine particles. The mechanism of the film formation is briefly discussed.

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