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Laser-Induced Fluorescence Detection of Diatomic Products of Reactive Ion Etching: SiN, SiO, and SiF

Published online by Cambridge University Press:  21 February 2011

R. Walkup ,
Ph. Avouris ,
R.W. Dreyfus ,
J.M. Jasinski  and
G.S. Selwyn
R. Walkup
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, New York 10598,
Ph. Avouris
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, New York 10598,
R.W. Dreyfus
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, New York 10598,
J.M. Jasinski
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, New York 10598,
G.S. Selwyn
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, New York 10598, IBM East Fishkill Development Laboratory, Hopewell Junction, New York 12533
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Abstract

Laser-induced fluorescence is used to detect a variety of silicon-containing diatomic radicals produced by the reactive ion etching and glow discharge sputtering of silicon and its oxide and nitride. The products include SiN, SiO, and SiF. Examination of the concentration of these molecules as a function of plasma conditions provides information about their production mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 269
Copyright
Copyright © Materials Research Society 1984

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References

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