Published online by Cambridge University Press: 21 February 2011
Recent studies have shown the potential of laser-induced chemical etching to become a powerful technique for processing electronic materials. In this paper, the unique strengths and limitations of the laser chemical approach are examined. Some photon-enhanced reaction mechanisms, in particular silicon-halogen reactions, are discussed to illustrate the many facets of the electronically, vibrationally and thermally activated surface processes. It is suggested that the field-assisted diffusion mechanism proposed by Winters, Coburn and Chuang may also be applicable to some photon-induced etching reactions. In addition, the salient features of the laser and the plasma-assisted etching methods are compared. The challenges to resolve certain fundamental and practical difficulties involved in developing the laser technique for processing technology are also outlined.