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Laser-Controlled Etching Of Chromium-Doped and N-Doped <100> Gaas*

Published online by Cambridge University Press:  15 February 2011

Gary C. Tisone  and
A. Wayne Johnson
Gary C. Tisone
Affiliation:
Sandia National Laboratories, Division 1126, Albuquerque, NM 87185, USA
A. Wayne Johnson
Affiliation:
Sandia National Laboratories, Division 1126, Albuquerque, NM 87185, USA
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Abstract

The photochemical etching of chromium-doped and n-doped <100> GaAs in HNO3 and KOH is examined in the wavelength region of 334 to 514 nm from an argon-ion laser. The etching process is found to be not thermally controlled. The etch rates of chromium-doped GaAs agree with a diffusion-controlled model of the photochemically produced holes. For both types of GaAs, HNO3 is found to produce morphologically superior results.

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Footnotes

*

This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE–AC04–76DP00789, for the Office of Basic Energy Science.

References

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