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Laser-Assisted TiSi2 Formation for ULSI Applications

Published online by Cambridge University Press:  10 February 2011

Nader Shamma ,
Somit Talwar ,
Gaurav Verma ,
Karl-Josef Kramer ,
Nigel Farrar ,
Chiu Chi ,
Wayne Greene  and
Kurt Weiner
Nader Shamma
Affiliation:
Hewlett-Packard Company, ULSI Research Laboratory, Palo Alto, CA 94304
Somit Talwar
Affiliation:
Ultratech Stepper Inc., San Jose, CA 95134
Gaurav Verma
Affiliation:
Ultratech Stepper Inc., San Jose, CA 95134
Karl-Josef Kramer
Affiliation:
Ultratech Stepper Inc., San Jose, CA 95134
Nigel Farrar
Affiliation:
Hewlett-Packard Company, ULSI Research Laboratory, Palo Alto, CA 94304
Chiu Chi
Affiliation:
Hewlett-Packard Company, ULSI Research Laboratory, Palo Alto, CA 94304
Wayne Greene
Affiliation:
Hewlett-Packard Company, ULSI Research Laboratory, Palo Alto, CA 94304
Kurt Weiner
Affiliation:
Ultratech Stepper Inc., San Jose, CA 95134
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Abstract

In this paper, we describe the results of recent work in which TiSi2 formation on deep-submicron polysilicon gates is achieved using pulsed excimer laser irradiation. Formation of low resistivity titanium suicide on sub-0.1 μm polysilicon lines is confirmed by sheet resistance measurements. High-resolution TEM examination shows exceptionally smooth interface between suicide and heavily-doped silicon substrate. Gate to source/drain bridging is not observed. Analytical techniques including Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD) have been used to characterize the irradiated films. This laser-assisted suicide formation process is a promising technology for extreme submicron MOSFET applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 265
Copyright
Copyright © Materials Research Society 1997

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References

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