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Large Area Electron Beam Enhanced Reactive Etching of SiO2

Published online by Cambridge University Press:  25 February 2011

P. Kirk Boyer ,
Tim Verhey  and
Jorge J. Rocca
P. Kirk Boyer
Affiliation:
Tektronix, Inc., P.O. Box 500, Beaverton, OR 97077
Tim Verhey
Affiliation:
Colorado State University, Dept. of Electrical Engineering, Fort Collins, CO 80523
Jorge J. Rocca
Affiliation:
Colorado State University, Dept. of Electrical Engineering, Fort Collins, CO 80523
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Abstract

A large area (2.8 cm2) electron beam source has been developed, characterized, and applied to anisotropic etching of SiO2 masked with photoresist. This beam operates at high pressures (up to 100 mTorr), in reactive gases, and at more than 10 mA/cm2. Beam current can be controlled in several ways independently from beam energy. The 100 – 900 eV low energy beam propagates with collimation through several cm of reactive gas, and is believed to minimize space charge defocusing by collisionally ionizing the working gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 223
Copyright
Copyright © Materials Research Society 1987

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References

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