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Kinetics of Copper Chemical Vapour Deposition from Cu(hfac)VTMS

Published online by Cambridge University Press:  10 February 2011

M. L. H. Ter Heerdt ,
P.J. Van Der Put  and
J. Schoonman
M. L. H. Ter Heerdt
Affiliation:
Laboratory for Inorganic Chemistry, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands
P.J. Van Der Put
Affiliation:
Laboratory for Inorganic Chemistry, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands
J. Schoonman
Affiliation:
Laboratory for Inorganic Chemistry, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands
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Abstract

A new model, based on irreversible reactions, is used to describe surface kinetics in copper Chemical Vapour Deposition. The mechanism proposed includes a reduction reaction with hydrogen parallel to the well-known disproportionation reaction of Cu(hfac)VTMS. This reduction reaction, not easily modelled by Langmuir-Hinshelwood-type models, appears to be important only at sufficiently high hydrogen partial pressures. The rate constants of the precursor adsorption reaction and the disproportionation reaction are low, probably caused by the dissociation included in these reactions.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 149
Copyright
Copyright © Materials Research Society 1999

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