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Key Issues Related to the Self-Aligned Formation of CoSi2 in a Salicide Process

Published online by Cambridge University Press:  26 February 2011

L. Van Den Hove ,
R. Wolters ,
M. Geyselaers ,
R. De Keersmaecker  and
G. Declerck
L. Van Den Hove
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3030 LeuvenBelgium
R. Wolters
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
M. Geyselaers
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
R. De Keersmaecker
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3030 LeuvenBelgium
G. Declerck
Affiliation:
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3030 LeuvenBelgium
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Abstract

The self-alignment of the Co-Si interaction at the edge of a Si-SiO2 transition has previously been ascribed to the fact that Co is the main moving species during silicide formation. However, the reactions in the Co-Si system are more complex. The phenomena of lateral silicidation and encroachment are therefore investigated at various stages of the Co/Si reaction using samples starting either from sputtered Co layers or from cosputtered Co-Si multilayers with varying average stoichiometries. The mechanisms resulting in the absence of lateral silicidation are clarified.

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References

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