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Island Scaling Effects on Photoluminescence of Strained SiGe/Si (100)

Published online by Cambridge University Press:  17 March 2011

Rebecca L. Peterson ,
Haizhou Yin  and
J. C. Sturm
Rebecca L. Peterson
Affiliation:
Princeton Institute for the Science and Technology of Materials (PRISM) and Department of Electrical Engineering, Engineering Quad, Olden Street, Princeton University Princeton, NJ 08544, U.S.A
Haizhou Yin
Affiliation:
Princeton Institute for the Science and Technology of Materials (PRISM) and Department of Electrical Engineering, Engineering Quad, Olden Street, Princeton University Princeton, NJ 08544, U.S.A
J. C. Sturm
Affiliation:
Princeton Institute for the Science and Technology of Materials (PRISM) and Department of Electrical Engineering, Engineering Quad, Olden Street, Princeton University Princeton, NJ 08544, U.S.A
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Abstract

The fabrication of electronic devices on semiconductor islands is becoming increasingly common because of silicon-on-insulator technology and/or because of strain engineering in compliant substrate approaches. While photoluminescence can be an accurate probe of Ge content and strain, in islands it can be affected by the presence of the island edges. Here we present data and a model showing that for high quality SiGe, edge effects are critical for sizes under ∼20 μm. These effects can be mitigated by regrowing epitaxial silicon to passivate the recombination states on the island edges.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B8.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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