Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-02-04T16:56:14.276Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Jimplantation to Inhibit Corrosion of Copper

Published online by Cambridge University Press:  15 February 2011

P. J. Ding ,
W. A. Lanford ,
S. Hymes  and
S. P. Murarka
P. J. Ding
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY12222
W. A. Lanford
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY12222
S. Hymes
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
Get access

Abstract

Ion implantation of boron and aluminium is used to passivate copper surfaces. Such a process modifies the copper only near its surface without affecting copper's desirable bulk properties. The present experiments show that implant doses as low as 1015 ions/cm2 of either boron or aluminium can reduce the oxidization rate by one order of magnitude or more compared to non-implanted samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 199
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chu, W. -K., Mayer, J. W. and Nicolet, M. -A., Backscattering Spectrometry, Academic Press, New York, 1978.Google Scholar
[2] Crowder, B. L. and Tan, S. I., IBM Tech. Disclosure Bull. 14, 198(1971)Google Scholar
[3] Svendsen, L. G., Corros. Sci. 20, 63(1980)CrossRefGoogle Scholar
[4] Svendsen, L. G., Eskildsen, S. S. and Borgesen, P., Thin Solid Films, 110, 237(1983)Google Scholar
[5] Henriksen, O., Laursen, T., Johnson, E., Johansen, A., Sarholt-Kristensen, L. and Whitton, J. L., Nucl. Instr. and Meth. B15, 356(1986)CrossRefGoogle Scholar
[6] Svendsen, L. G. and Borgesen, P., Nucl. Instr. and Meth. 191, 141(1981)CrossRefGoogle Scholar
[7] Zhou, P., M.Procter, R. P., Grant, W. A. and Ashworth, V., Nucl. Instr. and Meth. 209/210, 841(1983)Google Scholar
[8] Naguib, H. M., Kriegler, R. J., Davies, J. A. and Mitchell, J. B., J. Vac. Sci. Technol. 13, 396(1976)CrossRefGoogle Scholar
[9] Ratcliffe, R. J. and Collins, R. A., Phys. Stat. Sol.(a) 108, 537(1988)CrossRefGoogle Scholar
[10] Boron Deoxidized Copper 1170, Publication TP-58, 2nd Edition, Anaconda American Brass Company(1967)Google Scholar
[11] Bardeen, J., Brattain, W. H. and Shockley, W., J. Chem. Phys. 14, 714(1946)Google Scholar
[12] Ebisuzaki, Y. and Sanborn, W. B., J. Chem.Educa. 62,341 (1985)Google Scholar
[13] Roy, S. K., Bose, S. K. and Sircar, S. C., Oxid. Met. 35, 1(1991)CrossRefGoogle Scholar
[14] Uhrmacher, M., Bartos, A. and Boise, W., Mat. Sci. Eng. A116, 129(1989)CrossRefGoogle Scholar
[15] Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids, Pergamon Press, New York, 1985.Google Scholar