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Ion Implantation in InSb Grown on GaAs

Published online by Cambridge University Press:  25 February 2011

M. V. Rao ,
R. Echard ,
P. E. Thompson ,
A. K. Berry ,
S. Mulpuri  and
F. G. Moore
M. V. Rao
Affiliation:
Department of Electrical & Computer Engineering, George Mason University, Fairfax, VA 22030
R. Echard
Affiliation:
Department of Electrical & Computer Engineering, George Mason University, Fairfax, VA 22030
P. E. Thompson
Affiliation:
Department of Electrical & Computer Engineering, George Mason University, Fairfax, VA 22030
A. K. Berry
Affiliation:
Department of Electrical & Computer Engineering, George Mason University, Fairfax, VA 22030
S. Mulpuri
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
F. G. Moore
Affiliation:
NRC/NRL Associate, Washington, D.C. 20375
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Abstract

Be, S, Si, and Ne implantations were performed at room temperature into InSb layers grown on undoped semi-insulating GaAs substrates. The implant damage in InSb is of ntype behavior. The implanted material was subjected to both isochronal and isothermal annealing schemes using a molybdenum strip heater. A maximum p-type activation of 90 % and si-type activation of 16 % was achieved for Be and S implants, respectively. Si implant has an amphoteric doping behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 259
Copyright
Copyright © Materials Research Society 1991

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References

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