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Ion Implantation At Elevated Temperatures*

Published online by Cambridge University Press:  26 February 2011

Nghi Q. Lam  and
Gary K. Leaf
Nghi Q. Lam
Affiliation:
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439
Gary K. Leaf
Affiliation:
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439
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Abstract

A kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al+ and Si+ ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 467
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

Work supported by the U. S. Department of Energy, BES-Materials Sciences, and BES-Applied Mathematical Sciences, under Contract W-31-109-Eng-38.

References

REFERENCES

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