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Ion Implantation and Annealing in III-V Multilayer Heterojunctions

Published online by Cambridge University Press:  25 February 2011

C. W. Farley  and
B. G. Streetman
C. W. Farley
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Research Center University of Texas at Austin Austin, Tx 78712
B. G. Streetman
Affiliation:
Department of Electrical and Computer Engineering, Microelectronics Research Center University of Texas at Austin Austin, Tx 78712
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Abstract

This paper reviews the status of implantation and annealing in III-V multilayer heterojunctions. The limitations on diffusion doping of multilayers are noted. Current heterojunction device applications for implantation are summarized. Issues relevant to the annealing of multilayers are discussed, including Si migration in modulation doped structures, the effectiveness of rapid annealing in reducing SI diffusion, and impurity enhanced diffusion in superlattices. The formation of damage in multilayers and the unique properties of strained multilayers are also discussed. Finally, implant activation studies are summarized.

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References

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