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Ion Channeling Measurements on Germanium Implanted and Annealed Silicon

Published online by Cambridge University Press:  25 February 2011

E.A. Johnson ,
F. Namavar ,
E. Cortesi  and
R.J. Culbertson
E.A. Johnson
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA, 01730
F. Namavar
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA, 01730
E. Cortesi
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA, 01730
R.J. Culbertson
Affiliation:
U.S. Army Materials Technology Laboratory, Watertown, MA 02172-0001
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Abstract

We have prepared GexSi1-x/Si structures by implanting germanium into silicon <100> surfaces and thermally annealing. Implant energies were 100 and 150 keV and the total ion doses were between 1 and 10 × 1015 ions/cm2. Ion channeling studies of these structures indicates that after annealing, the germanium atoms substitute into the silicon lattice and create a pseu-domorphic strained layer. In addition, channeling results suggest a residual band of dislocations at or beyond the ion range in the as-annealed samples.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 721
Copyright
Copyright © Materials Research Society 1990

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References

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