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Ion Beam Induced Regrowth in GaAs

Published online by Cambridge University Press:  26 February 2011

S. T. Johnson ,
J. S. Williams ,
E. Nygren  and
R. G. Elliman
S. T. Johnson
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia
J. S. Williams
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia
E. Nygren
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia
R. G. Elliman
Affiliation:
CSIRO Materials Science and Technology, Clayton, Australia
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Abstract

Ion implanted, amorphous layers on (100) GaAs have been recrystallised epitaxially by 1.5 MeV Ne+ irradiation at temperatures between 75°C and 135°C. The extent of regrowth essentially increases linearly with ion fluence in the early stages of crystallization and the process is characterized by an activation energy of 0.16eV, about an order of magnitude lower than that for thermal - only epitaxy. Beam annealing produces dislocations in the underlying GaAs crystal, the density of which increases with depth up to the Ne+ ion range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 423
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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