Hostname: page-component-54dcc4c588-2bdfx Total loading time: 0 Render date: 2025-09-29T13:09:28.553Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Induced Regrowth in GaAs

Published online by Cambridge University Press:  26 February 2011

S. T. Johnson ,
J. S. Williams ,
E. Nygren  and
R. G. Elliman
S. T. Johnson
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia
J. S. Williams
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia
E. Nygren
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia
R. G. Elliman
Affiliation:
CSIRO Materials Science and Technology, Clayton, Australia
Get access

Abstract

Ion implanted, amorphous layers on (100) GaAs have been recrystallised epitaxially by 1.5 MeV Ne+ irradiation at temperatures between 75°C and 135°C. The extent of regrowth essentially increases linearly with ion fluence in the early stages of crystallization and the process is characterized by an activation energy of 0.16eV, about an order of magnitude lower than that for thermal - only epitaxy. Beam annealing produces dislocations in the underlying GaAs crystal, the density of which increases with depth up to the Ne+ ion range.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Olson, G.L., Mat. Res. Soc. Symp. Proc. 35 (1985) 25.Google Scholar
2. See for example Williams, J.S., Mat. Res. Soc. Symp. Proc. 13 (1983) 621.CrossRefGoogle Scholar
3. Williams, J.S., Elliman, R.G., Brown, W.L. and Seidel, T.E., Phys. Rev. Lett. 55 (1985) 1482.Google Scholar
4. Elliman, R.G., Williams, J.S., Johnson, S.T. and Nygren, E., Mat. Res. Soc. Symp. Proc. 74 (1987) 471.CrossRefGoogle Scholar
5. Rossiter, K.G., Elliman, R.G., Mitchell, I.V., Pogany, A.P. and Williams, J.S., Nucl. Inst. and Meth. 218 (1983) 639.Google Scholar
6. Licoppe, C., Nissim, Y.I. and Meriadec, C., Phys. 58 (1985) 3094.Google Scholar
7. Johnson, S.T., Williams, J.S., Nygren, E. and Elliman, R.G., Submitted App. Phys. Lett. (1987).Google Scholar