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Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

Published online by Cambridge University Press:  10 February 2011

C. Hecht ,
R. Kummer  and
A. Winnacker
C. Hecht
Affiliation:
Institut für Werkstoffwissenschaften VI, Universität Erlangen, Martensstr. 7, D-91058 Erlangen, Germany, awinn @ ww.uni-erlangen.de
R. Kummer
Affiliation:
Institut für Werkstoffwissenschaften VI, Universität Erlangen, Martensstr. 7, D-91058 Erlangen, Germany, awinn @ ww.uni-erlangen.de
A. Winnacker
Affiliation:
Institut für Werkstoffwissenschaften VI, Universität Erlangen, Martensstr. 7, D-91058 Erlangen, Germany, awinn @ ww.uni-erlangen.de
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Abstract

In the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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References

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