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Investigation of the Cobalt Segregation and the Structure of a Grain Boundary in Silicon

Published online by Cambridge University Press:  26 February 2011

T. Tütken ,
W. Schröter  and
H.J. Möller
T. Tütken
Affiliation:
IV.Phys.Inst., University of Göttingen, 34 Göttingen, FRG
W. Schröter
Affiliation:
IV.Phys.Inst., University of Göttingen, 34 Göttingen, FRG
H.J. Möller
Affiliation:
Institute of Semiconductor Technology, Technical University Hamburg Harburg, 2100 Hamburg 90, FRG
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Abstract

An atomic model of the structure of a <001> ∑ = 13 grain boundary is proposed. The segregation of cobalt at the same grain boundary is investigated by M∑ϐbauer spectroscopy, autoradiography and the I6/I14 method quantitatively. The results, which are consistent with the assumption that CoSi2 precipitates are formed, are discussed in view of the atomic structure.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 109
Copyright
Copyright © Materials Research Society 1988

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References

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