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Investigation of Lateral and Vertical Profiles Enhanced by Implantation

Published online by Cambridge University Press:  21 February 2011

A. Mineji ,
K. Hamada  and
S. Saito
A. Mineji
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
K. Hamada
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
S. Saito
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

In shallow junction formation with junction depth below 0.1μm, enhanced diffusion control is essential. The purpose of this paper is to investigate the B enhanced diffusion by point defects, introduced by high dose implantation with amorphization. Ge ions were implanted to induce amorphization within the S/D region of pMOS. These results were compared with that of the B enhanced diffusion by point defects, induced by Si+ implant with non-amorphization. These results suggest that the B enhanced diffusion in lateral profiles is much smaller, compared with that in vertical profiles, when point defects were introduced by amorphization.

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References

1 FAIR, Richard B., Nuclear Instruments and Methods in Physics Research B37/38, 371 (1989)Google Scholar
2 Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., and Poate, J.M., Appl. Phys. Lett. 65, 2305 (1994)Google Scholar
3 Stolk, P.A., Gossmann, H.-J., Eaglesham, D.J., and Poate, J.M., Appl. Phys. Lett. 66, 568 (1995)Google Scholar
4 Kasai, Naoki, Ichiro Yamamoto, and Kuniaki Koyama, Proc. IEEE 1995 ICMTS, Vol 8, 39 (1995)Google Scholar