Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-04T16:59:14.474Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Crystalline Silicon Surface Treatments in Amorphous – Crystalline Heterojunction Via Capacitance Measurements

Published online by Cambridge University Press:  17 March 2011

M. Tucci ,
R. De Rosa ,
F. Roca ,
D. Caputo  and
F. Palma
M. Tucci
Affiliation:
ENEA – Research Centre, Località Granatello-80055 Portici (Na), Italy
R. De Rosa
Affiliation:
ENEA – Research Centre, Località Granatello-80055 Portici (Na), Italy
F. Roca
Affiliation:
ENEA – Research Centre, Località Granatello-80055 Portici (Na), Italy
D. Caputo
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome, Italy
F. Palma
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome, Italy
Get access

Abstract

In this work we investigate the density of states at amorphous-crystalline silicon interface that play the key role in the heterostructure solar cell application. In particular we analyzed the defect density arising from plasma treatment of the crystalline surface. This process is useful to clean the crystalline surface, but greatly influenced the electrical properties of the device. We used low temperature (20K-300K) capacitance measurement performed in a wide range of frequency of signal probe (1Hz-10kHz). Differences in the capacitance profile between samples with various plasma dry treatments indicate different defect density profile at interface. With the aid of a finite difference model of the capacitance as a function of temperature and frequency we extract information from the measurements about the defect energy distribution at interface. As a result, the density and the nature of defects at interface will be correlated to the technological parameters as: wafer cleaning procedure, hydrogen plasma treatment, type and concentration of dopants at interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A13.3
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tanaka, K., Taguchi, M., Takahama, T., Sawada, T., Kuroda, S., Matsuyama, T., Tsuda, S., Takeoka, A., Nakano, S., Hanafusa, H., Kuwano, Y., Progress in Photovoltaics: Research and Applications, 1, p. 85 (1993).Google Scholar
2. Matsuura, H. and Okushi, H., in “Amorphous and Microcrystalline Semiconductor Devices”, Kanicki, Jerzy Editor, 2, p. 517 (1992).Google Scholar
3. Rosa, R. De, Addonizio, M.L., Chiacchio, E., Roca, F., Tucci, M. Mat. Res. Symp. 557, p.585 (1999).Google Scholar
4. Solar, M. Tucci Energy Materials and Solar Cells, 57, p. 249 (1999).Google Scholar
5. Rosa, R. De, Grillo, P., Sinno, G., Roca, F., Tucci, M., 2nd World Conf. Exhib. On Photovol. Solar Eenergy Convers Proc. 2, 1583 (1998).Google Scholar
6. Cohen, J.D. in ‘Semiconductor and Semimetal’, Pankove, J.I. Editor, Accademic Press Inc. Orlando, 21C p.9, (1984).Google Scholar
7. Caputo, D., Forghieri, U., Palma, F., Procedings of the 14th European Photov. Solar En. Conf., p. 187 (1995).Google Scholar
8. Fonash, S.J. in ‘Solar cell device physics’, Harcourt Brace Jovanovich, Publishers, Accademic Press, Inc. (1981).Google Scholar