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Investigation of Chromium Nitridation Using Ion Beam Resonance Analysis

Published online by Cambridge University Press:  25 February 2011

S.W. Russell ,
A.E. Bair ,
M.J. Rack ,
D. Adams ,
R.L. Spreitzer ,
T.L. Alford  and
R.J. Culbertson
S.W. Russell
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287-6006
A.E. Bair
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287-6006
M.J. Rack
Affiliation:
Arizona State University, Department of Electrical Engineering, Tempe, AZ 85287-5706
D. Adams
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287-6006
R.L. Spreitzer
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287-6006
T.L. Alford
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287-6006
R.J. Culbertson
Affiliation:
Arizona State University, Department of Physics and Astronomy, Tempe, AZ 85287-1504
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Abstract

We investigate the nitridation of chromium films in an NH3 ambient at 500°C. Rutherford backscattering spectrometry using 2.0 MeV He2+ was utilized to determine the compositions of thick reacted layers and to provide calibration for the other techniques. In addition, analysis was performed using the 14N(α,α)14N resonance at 3.72 MeV in order to enhance sensitivity to nitrogen. Sputter-deposited TiN was used as a calibration for the cross section a for this resonance over the energy range 3.05-3.85 MeV and compared to the literature value. We find that analysis just above the peak in the resonance provides excellent sensitivity to N concentration in the nitride layers. This approach may be readily used in conjunction with 2.0 MeV backscattering to determine the overall composition and sample configuration. Auger electron spectroscopy was used to provide more depth sensitivity in compositional profiling and to monitor the oxygen impurity distribution. X-ray diffraction was used to identify phases in both as-deposited and annealed films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 619
Copyright
Copyright © Materials Research Society 1995

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References

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