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Investigation of Biaxial Strain in Strained Silicon on Insulator (SSOI) Using High-Resolution X-ray Diffraction

Published online by Cambridge University Press:  01 February 2011

Yeongseok Zoo ,
N. D. Theodore  and
Terry L. Alford
Yeongseok Zoo
Affiliation:
zooys94@asu.edu, Arizona State University, School of Materials, university drive and mill avenue, tempe, AZ, 85287, United States
N. D. Theodore
Affiliation:
david.theodore@freescale.com, Freescale Semiconductor Inc., tempe, AZ, 85284, United States
Terry L. Alford
Affiliation:
TA@asu.edu, Arizona State University, School of Materials, tempe, AZ, 85287-8706, United States
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Abstract

Intrinsic biaxial strain values of strained Si on insulator (SSOI) layers were measured using symmetric Bragg-Brentano configuration (i.e., {004} θ-2θ scans) and asymmetric {224} rocking curves. We confirmed that the twist angle between the layer and substrate can be incorporated into the biaxial strain equations for epitaxial layers. Moreover, as the samples were annealed up to 1200°C, the tensile parallel strains increased from 0.56% to 0.7%. Since both the overlying strained Si and underlying substrate maintained a stressed state in the buried SiO2, the compressively strained oxide retained the lattice expansion of the overlying strained Si and resulted in the increasing parallel strains after annealing.

Keywords

x-ray diffraction (XRD)thermal stressesstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-03
Copyright
Copyright © Materials Research Society 2007

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