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Investigation of Amorphous InGaZnO Based TFT Interface Properties with Synchrotron Radiation Analysis

Published online by Cambridge University Press:  01 February 2011

Minho Joo ,
Jongkwon Choi ,
Seokhwan Noh ,
Kyuho Park ,
Kyuwook Ihm ,
Kijeong Kim  and
Taihee Kang
Minho Joo
Affiliation:
joominho@lge.com, LG Electronics Advanced Research Institute, Devices & Materials Laboratory, Seoul, Korea, Republic of
Jongkwon Choi
Affiliation:
cjksmile@lge.com, LG Electronics Advanced Research Institute, Devices & Materials Laboratory, Seoul, Korea, Republic of
Seokhwan Noh
Affiliation:
shnoh@lge.com, LG Electronics Advanced Research Institute, Devices & Materials Laboratory, Seoul, Korea, Republic of
Kyuho Park
Affiliation:
pkhcjchw@lge.com, LG Electronics Advanced Research Institute, Devices & Materials Laboratory, Seoul, Korea, Republic of
Kyuwook Ihm
Affiliation:
johnet97@postech.ac.kr, Beamline Research Devision, Pohang Accelerator Laboratory, Pohang, Korea, Republic of
Kijeong Kim
Affiliation:
kjkim@postech.ac.kr, Beamline Research Devision, Pohang Accelerator Laboratory, Pohang, Korea, Republic of
Taihee Kang
Affiliation:
thkang@postech.ac.kr, Beamline Research Devision, Pohang Accelerator Laboratory, Pohang, Korea, Republic of
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Abstract

We investigated the amorphous indium gallium zinc oxide (IGZO) based TFT interface properties using synchrotron radiation analysis. Near edge x-ray absorption fine structure shows the presence of N2 molecules between gate dielectric layer and active channel layer. The physical damage enhanced by the sputtering process was the origin of the device degradation evolving molecular state N2.

Keywords

electrical propertiesphotoemissionextended x-ray absorption fine structure(EXAFS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-08
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature (Lodon) 432, 488 (2004).Google Scholar
2. Yabuta, H., Sano, M., Abe, K., Aiba, T., Den, T., Kumomi, H., Nomura, K., Kamiya, T., and Hosono, H., Appl. Phy. Lett. 89, 112123 (2006).Google Scholar
3. Nomura, K., Ohta, H., eda, K., Kamiya, T., Hirano, M., and Hosono, H., Science 300, 1269 (2003).Google Scholar
4. Hoffman, R. L., Norris, B. J., and Wager, J. F., Appl. Phys. Lett. 82, 733 (2003).Google Scholar
5. Chung, Y., Lee, J. C., and Shin, H. J., Appl. Phy. Lett. 86, 022901 (2005).Google Scholar
6. King, G. C., Read, F. H., and Tronc, M., Chem. Phys. Lett. 52, 50 (1997).Google Scholar
7. Chen, C. T., Ma, Y., and Sette, F., Phys. Rev. A 40, 6737 (1989).Google Scholar
8. Wu, Z. Y., Gota, S., Jollet, F., Pollak, M., Goutier-Soyer, M., and Natoli, C. R., Phys. Rev. B 55, 2570 (1997).Google Scholar
9. De Groot, F. M. F., Grioni, M., Fuggle, J. C., Ghijsen, J., and Sawatzky, G. A., Phys. Rev. B 40, 5715 (1989).Google Scholar