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Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  10 February 2011

W. Walukiewicz ,
L. Hsu  and
J. M. Redwing
W. Walukiewicz
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
L. Hsu
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Dept. of Physics, University of California-Berkeley, Berkeley, CA 94720
J. M. Redwing
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Dr., Danbury, CT 06810
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Abstract

We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1−xN/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1−xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 573
Copyright
Copyright © Materials Research Society 1997

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References

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