Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-02-10T12:26:08.308Z Has data issue: false hasContentIssue false
  • English
  • Français

Internal Electric Field in Light-Degraded p-i-n a-Si:H Solar Cells

Published online by Cambridge University Press:  01 January 1993

Franc Smole ,
JoŽe Furlan  and
Marko TopiČ
Franc Smole
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka c. 25, Ljubljana, Slovenia
JoŽe Furlan
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka c. 25, Ljubljana, Slovenia
Marko TopiČ
Affiliation:
Faculty of Electrical and Computer Engineering, University of Ljubljana, TržaŠka c. 25, Ljubljana, Slovenia
Get access

Abstract

Based on results of a-Si:H solar cell computer simulation solving numerically the Poisson, transport and continuity equations, using a rather complex density of states distribution being in agreement with experimental observations, shows that light-soaking degradation can be attributed to both, light induced effects in heterojunction region and to changes in the i-layer, which together tend to reduce the built-in electric field inside of the i-region. Measurements of spectral sensitivity using small intensity monochromatic illumination in combination with an accurate computer analysis provides the possibility of ascertaining which of the degrading effects is the dominating one in a particular a-Si:H solar cell structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 631
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Smole, F., Proceedings of the 6th International Photovoltaic Science and Engineering Conference, New Delhi (Rekha Printers Pvt. Ltd., New Delhi, 1992), p. 293.Google Scholar
2. Hack, M. and Shur, M., J.Appl.Phys. 59 (6), 2222 (1986).Google Scholar
3. Smole, F., Proceedings of the 2nd Workshop on Physics and Applications of Amorphous Semiconductors,Torino, (World Scientific, Singapore, 1988), p. 175.Google Scholar
4. Smole, F. and Furlan, J., J.Appl.Phys. 72 (12), 5964 (1992).Google Scholar
5. Tasaki, H., Kim, W.Y., Hallerdt, M., Konagai, M., and Takahashi, K., J.Appl.Phys. 63 (2), 550 (1988).Google Scholar
6. Tsutsumi, Y., Uchiyama, K., Hattori, K., Okamoto, H., and Hamakawa, Y., Proceedings of the 5th International Photovoltaic Science and Engineering Conference,Kyoto (Showado Insatsu K.K., Tokyo, 1990), p. 809.Google Scholar