Hostname: page-component-54dcc4c588-dbm8p Total loading time: 0 Render date: 2025-09-30T10:33:23.396Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Reactions of Titanium Thin Films on P+-Implanted (001)Si

Published online by Cambridge University Press:  26 February 2011

M. H. Wan ,
W. Lur ,
H. C. Cheng  and
L. J. Chen
M. H. Wan
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
W. Lur
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
H. C. Cheng
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

Interfacial reactions of titanium thin films on P+-implanted silicon have been studied by transmission electron microscopy.

The presence of titanium thin films on P+-implanted silicon was found to alter the defect configuration in the recrystallized layer. Interfacial reactions of titanium thin films on silicon were also found to be influenced by the presence of dopants as well as changes in the microstructures of the substrate. The results are compared with those found in previous studies of Ti thin films on ion-implanted silicon as well as on unimplanted samples. The mechanisms for the chaiiges in defect configuration and phase formation are discussed.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Murarka, S.P., J. Vac. Sci. Technol. B4, 1325 (1986).Google Scholar
2. Kwok, S.P., J. Vac. Sci. Technol. B4, 1383 (1986).CrossRefGoogle Scholar
3. Finstad, T., Brat, T., Osburn, C.M., Liu, J. and Ellington, B., J. Electrochem. Soc. 133, 1451 (1986).Google Scholar
4. Osburn, C.M., Tsai, M.Y., Roberts, S., Hu, G.J. and Schweighart, A.M., in VLSI Science and Technology/1982, edited by Dell'Oca, C.J. and Bullis, W.M. (Electrochemical Society, Pennington, NJ, 1982), p. 213.Google Scholar
5. Haken, R.A., J. Vac. Sci. Technol. B3, 1657 (1985).CrossRefGoogle Scholar
6. Chow, T.P., Katz, W. and Goehner, R., in VLSI Science and Technology/1984, edited by Bean, K.E. and Rozgonyi, G.A. (Electrochemical Society, Pennington, NJ, 1984), p. 465.Google Scholar
7. Dowben, S.L., Marsh, D.W., Smith, G.A., Lewis, N., Chow, T.P. and Katz, W., Proc. Mat. Res. Soc. Symp. 48, 355 (1985).CrossRefGoogle Scholar
8. Revesz, P., Gyimesi, J. and Zsoldos, E., J. Appl. Phys, 54, 1860 (1983).Google Scholar
9. Park, H.K., Sachitano, J., McPherson, M., Yamaguchi, T. and Lehman, G., J. Vac. Sci. Technol. A2, 264 (1984).Google Scholar
10. Gas, P., Deline, V., D'Heurle, F.M., Michel, A. and Scilla, G., J. Appl. Phys. 60, 1634 (1986).Google Scholar
11. IIICooper, C.B., Powell, R.A. and Chow, R., J. Vac. Sci. Technol. B2, 718 (1984).Google Scholar
12. Amano, J. and Merchant, P., Appl. Phys. Lett. 44, 744 (1984).Google Scholar
13. Hwang, J.J., Rogers, S.H. and Li, B.Z., J. Electro. Mater. 12, 667 (1983).Google Scholar
14. Amano, J., Nauka, K., Scott, M.P., Turner, J.E. and Tsai, R., Appl. Phys. Lett. 48, 767 (1986).Google Scholar
15. Rubloff, G.W., Surf. Sci. 132, 268 (1983).Google Scholar
16. Amano, J., Merchant, P., Cass, T.R., Miler, J.N. and Koch, T., J. Appl. Phys. 59, 2689 (1986).Google Scholar
17. Ohdomari, I., Konuma, K., Takano, M., Chikyow, T., Kawarada, H., Nakanishi, J. and Ueno, T., Proc. Mat. Res. Soc. 54, 63 (1986).Google Scholar
18. Revesz, P., Zheng, L.R., Hung, L.S. and Mayer, J.W., Appl. Phys. Lett. 44, 459 (1984).Google Scholar
19. Wen, D.S., Smith, P.L., Osburn, C.M. and Rozgonyi, G.A., Appl. Phys. Lett. 51, 1182 (1987).Google Scholar
20. Sands, T., Washburn, J., Myers, E. and Sadana, D.K., Nucl. Instrum. and Methods in Phys. Res. B7/8, 337 (1985).Google Scholar
21. Carter, C., Maszara, W., Sadana, D.K., Rozgonyi, G.A., Liu, T. and Wortman, T., Appl. Phys. Lett. 44, 459 (1984).Google Scholar