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Interfacial Layer Formation of a Heat Treated Teos Based Oxide Prepared by a Pecvd Technique

Published online by Cambridge University Press:  03 September 2012

T.J. Lee ,
D.S. Jeong ,
C.S. Song ,
S.Y. Lee  and
C.H. Park
T.J. Lee
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
D.S. Jeong
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
C.S. Song
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
S.Y. Lee
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
C.H. Park
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
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Abstract

An interfacial layer is formed between the TEOS(tetraethylorthosilicate) based oxide and silicon substrate when the oxide is thermally treated and it shows unique properties by leaving a unremovable layer in an H F(hydrofluoric acid) dipping. While the interface formed in the temperature range of 950 - 1100 °C demonstrates hydrophilic state, it renders the surface hydrophobic in the higher range of 1150 - 1200 °C. Its characteristics are analyzed by ESCA and the measurement of water contact angle on the silicon surface after stripping the oxide.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 333
Copyright
Copyright © Materials Research Society 1997

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References

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