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Interface Velocity Transients During Melting of a-Si/C-Si Thin Films

Published online by Cambridge University Press:  26 February 2011

J. Y. Tsao ,
M. J. Aziz ,
P. S. Peercy  and
M. O. Thompson
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M. J. Aziz
Affiliation:
Harvard University, Cambridge, MA 02138
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M. O. Thompson
Affiliation:
Cornell University, Ithaca, NY 14853
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Abstract

We report transient conductance measurements of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work [1]. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 519
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1 Thompson, M.O., Calvin, G.J., Mayer, J.W., Peercy, P.S., Poate, J.M., Jacobson, D.C., Cullis, A.G. and Chew, N.C., Phys. Rev. Lett. 52, 2360 (1984); and J.Y. Tsao, M.J. Aziz, M.O. Thompson and P.S. Peercy, Phys. Rev. Lett. 56, 2712 (1986).Google Scholar
2 See, e.g., Cormia, R.L., Mackenzie, J.D. and Turnbull, D., J. Appl. Phys. 34, 2239 (1963).Google Scholar
3 Thompson, M.O., Mayer, J.W., Cullis, A.G., Webber, H.C., Chew, N.G., Poate, J.M. and Jacobson, D.C., Phys. Rev. Lett. 50, 896 (1983); G.J. Calvin, J.W. Mayer and P.S. Peercy, Appl. Phys. Lett. 46, 644 (1985); and J.Y. Tsao, P.S. Peercy and M.O. Thompson, J. Mater. Res. 2, 91 (1987).Google Scholar
4 Tsao, J.Y., Aziz, M.J., Peercy, P.S. and Thompson, M.O., Mat. Res. Soc. Symp. Proc. 74, 117 (1987).Google Scholar
5 Jackson, K.A., in Crystal Growth and Characterization, Ueda, R. and Mullin, J.B., eds. (North-Holland, Amsterdam, 1975), pp. 21–32.Google Scholar
6 Note that for the common case in which the entropy difference between liquid and solid is slight, freezing becomes collision-limited as well.Google Scholar
7 Richards, P.M., manuscript in preparation.Google Scholar
8 Larson, B.C., Tischler, J.Z. and Mills, D.M., J. Mater. Res. 1, 144 (1986).Google Scholar
9 Thompson, M.O., Calvin, G.J., Mayer, J.W., Peercy, P.S. and Hammond, R.B., Appl. Phys. Lett. 42, 445 (1983).Google Scholar
10 Note also that if the melting velocity is rapid, the heat flow into the underlying solid can be neglected, as discussed in Thompson, M.O., Liquid-Solid Interface Dynamics During Pulsed Laser Melting of Silicon-on-Sapphire (Ph.D thesis, Cornell University, 1984), pp. 105–109.Google Scholar
11 This depth deficit is the difference between the actual melt depth and the melt depth which would have been achieved without a velocity transient -- i.e., if the 1-Si temperature attained its steady state value immediately after the interface passed from a-Si to c-Si.Google Scholar
12 Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., J. Appl. Phys. 57, 1795 (1985).Google Scholar
13 Based on a heat-flow code written by Thompson, M.O..Google Scholar
14 Thompson, M.O., 1984, op. cit.Google Scholar