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Interface Temperatures and Temperature Gradients in Silicon During Pulsed Laser Irradiation†

Published online by Cambridge University Press:  26 February 2011

B. C. Larson ,
J. Z. Tischler  and
D. M. Mills
B. C. Larson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Z. Tischler
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. M. Mills
Affiliation:
CHESS and Department of Appl. and Eng. Physics, Cornell University, Ithaca, NY 14853
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Abstract

Nanosecond-resolution x-ray diffraction has been used to measure the interface and lattice temperatures of silicon during rapid, pulsed-laser induced melting and regrowth in silicon. Measurements have been carried out on <100> and <111> oriented silicon using the (100) and (111) reflections to measure the thermal strain during 30 ns, 1.1 J/cm2 KrF laser pulses. The results indicate overheating to be low (< 2 K/m/s) for both orientations with undercooling rates of 5.6 K/m/s and 11.4 K/m/s for the <100> and <111> orientations, respectively. Observations of higher than expected temperature gradients below the liquidsolid interface have been discussed in terms of restricted heat flow under high gradients.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 513
Copyright
Copyright © Materials Research Society 1988

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Footnotes

†

tResearch sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

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