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Interface Structure of Epitaxial Nb Films on Sapphire: Grazing Incidence X-Ray Diffraction and X-Ray Reflectivity Studies

Published online by Cambridge University Press:  26 February 2011

C. H. Lee ,
K. S. Liang ,
F. S. Shieu ,
S.L. Sass  and
C. P. Flynn
C. H. Lee
Affiliation:
Corporate Research, Exxon Research and Engineering Company, Annandale, NJ 08801
K. S. Liang
Affiliation:
Corporate Research, Exxon Research and Engineering Company, Annandale, NJ 08801
F. S. Shieu
Affiliation:
Department of Material Science and Engineering, Cornell University, Ithaca, NY 14853
S.L. Sass
Affiliation:
Department of Material Science and Engineering, Cornell University, Ithaca, NY 14853
C. P. Flynn
Affiliation:
Department of Physics, University of Illinois, Urbana, IL 61801
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Abstract

The interface structure of MBE grown Nb films on sapphire substrates was studied using grazing incidence x-ray diffraction and x-ray reflectivity measurements. Specifically, the use of these x-ray techniques in probing the buried interfaces was demonstrated. Diffraction effects were observed which are consistent with the presence of misfit dislocations in the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 679
Copyright
Copyright © Materials Research Society 1991

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References

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