Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-27T13:58:13.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface Strain and the Valence Band Offset at the Lattice Matched In0.53Ga0.47As/InP (001) Interface

Published online by Cambridge University Press:  25 February 2011

Mark S. Hybertsen
Mark S. Hybertsen*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

Total energy minimization calculations show that the interface bonds are strained in nominally lattice matched In0.53 Ga0.47As/InP (001) heterostructures, in agreement with recent X-ray measurements. Anion intermixing relieves the interface strain. The calculated valence band offset varies with the interface bond lengths so the minimum energy structure must be used for a given composition. Then the calculated offset is independent of composition and is in good agreement with experiment. A simple model exhibits the qualitative features revealed by these calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 109
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] See, for example, Heterojunction Band Discontinuities:Physics and Applications edited by Capasso, F. and Margaritondo, G. (North-Holland, New York, 1987).Google Scholar
[2] One finds dInAs=1.514 Å, dlnp=1.467 Å, and dMp=1.418 A resulting in ε=0.032 based on data from Zahlenwerte und Funktionen aus Naturwissenshaften und Technik, Vol III of Landolt-Bornstein, edited by Hellwege, K.H. (Springer, New York, 1982), Vol. 17a.Google Scholar
[3] Vandenberg, J.M., et al., Appl. Phys. Lett. 53, 1920 (1988).Google Scholar
[4] Forrest, S.R., et al., Appl. Phys. Lett. 45, 1199 (1984). S.R. Forrest in Ref. 1.Google Scholar
[5] Cavicchi, R.E., et al., Appl. Phys. Lett. 54, 739 (1989); D.V. Lang in Ref. 1.Google Scholar
[6] Haase, M.A., Pan, N., and Stillman, G.E., Appl. Phys. Lett. 54, 1457 (1989).Google Scholar
[7] Hohenberg, P. and Kohn, W., Phys. Rev. 136, B864 (1964); W. Kohn and L.J. Sham, Phys. Rev. 140, A1133 (1965). Correlation data: D.M. Ceperley and B.I. Alder, Phys. Rev. Lett. 45, 566 (1980) as parameterized in J.P. Perdew and A. Zunger Phys. Rev. B 23, 5048 (1981).Google Scholar
[8] Kerker, G.P., J. Phys. C 13, L189 (1980). S.G. Louie, S. Froyen and M.L. Cohen, Phys. Rev. B 26, 1738 (1982).Google Scholar
[9] The spin-orbit splitting, estimated from experiment (Ref. 2), contributes 84 meV to the band offset.Google Scholar
[10] Zhang, S.B., et al., Solid State Commun. 66, 585 (1988).Google Scholar
[11] The bare exchange contribution is calculated directly while the correlation contribution is estimated from detailed calculations [Zhu, X.-J. and Louie, S.G., private communication] for GaAs, InAs, and InP.Google Scholar
[12] Gershoni, D., et al., Phys. Rev. B 39, 5531 (1989).Google Scholar
[13] Harrison, W.A., et al., Phys. Rev. B 18, 4402 (1978)Google Scholar