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Interface Effects on the Raman Spectra of Si/3C-SiC Superlattices

Published online by Cambridge University Press:  21 March 2011

E. F. Bezerra ,
A. G. Souza Filho ,
J. Mendes Filho ,
V. Lemos ,
V. N. Freire ,
Y. Ikoma ,
F. Watanabe  and
T. Motooka
E. F. Bezerra
Affiliation:
Departamento de Física, Universidade Federal do Ceará, Centro de Ciências, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceará, Brazil
A. G. Souza Filho
Affiliation:
Departamento de Física, Universidade Federal do Ceará, Centro de Ciências, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceará, Brazil
J. Mendes Filho
Affiliation:
Departamento de Física, Universidade Federal do Ceará, Centro de Ciências, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceará, Brazil
V. Lemos
Affiliation:
Departamento de Física, Universidade Federal do Ceará, Centro de Ciências, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceará, Brazil
V. N. Freire
Affiliation:
Departamento de Física, Universidade Federal do Ceará, Centro de Ciências, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceará, Brazil
Y. Ikoma
Affiliation:
Department of Materials Science and Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
F. Watanabe
Affiliation:
Department of Materials Science and Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
T. Motooka
Affiliation:
Department of Materials Science and Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
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Abstract

Theoretical calculations are performed on the role of smooth interfaces in the Raman spectra of Si/3C-SiC superlattices. The dispersion relations were obtained using a linear chain model with the alloyed interface δ-(3C-SiC)0.5(Si)0.5 described in the virtual crystal approximation. A modified bond-polarizability model was used to calculate the Raman spectra. The main results are the enhancement of the Raman spectra and the appearance of new peaks in between those related to the Si quasi confined and the 3C-SiC-confined modes with increasing number δ?of interfacial monolayers (3C-SiC)0.5(Si)0.5. Some of the smooth interface related Raman peaks have intensity comparable with those of an abrupt Si/3C-SiC superlattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.38
Copyright
Copyright © Materials Research Society 2001

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References

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