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Interdiffusion Enhancement in AIGaAs/GaAs Superlattices in the Presence of Carbon

Published online by Cambridge University Press:  21 February 2011

Zul Jamal  and
P J Goodhew
Zul Jamal
Affiliation:
School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Perak Branch Campus, 31750 Tronoh, Perak Darul Ridzuan, Malaysia
P J Goodhew
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, L69 3BX, UK
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Abstract

The mechanism of C diffusion through short period GaAs-A1GaAs superlattices has been investigated. The diffusion coefficient of C and the interdiffusion rates of the Ga and Al atoms were estimated by analysing, respectively, SIMS data and TEM image intensity traces. The TEM and SIMS results shows that C diffuses with an activation energy of about 2.8eV in the range 850-1000°C and that interdiffusion of Al and Ga on the group III lattice is enhanced by a factor of 5 or more when the C concentration exceeds about 5 × 1019cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 105
Copyright
Copyright © Materials Research Society 1994

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