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Interactions of Implanted Carbon with Oxygen and Nitrogen in Silicon

Published online by Cambridge University Press:  26 February 2011

H. J. Stein
H. J. Stein*
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

Carbon has been implanted into Si to overlap implanted concentrations of oxygen and nitrogen. Impurity incorporation and interactions produced by implantation at 50°C, and upon subsequent annealing to 900°C, were monitored by infrared absorption. Implantation with 0 and C introduces absorption bands for C-0 centers in addition to those for substitutional C, interstitial 0, and 0-vacancy centers. These centers are removed by annealing. The major effect of C in N-implanted layers is a suppression of absorption bands associated previously with N aggregates. There is, apparently, a strong interaction between C and displacement defects which can alter defect reordering and control the loss of C from substitutional sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 173
Copyright
Copyright © Materials Research Society 1988

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References

List of References

1) See for example, Newman, R. C., in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, edited by Mikkelsen, J. C. Jr, Pearton, S. J., Corbett, J. W. and Pennycook, S. J., (Mater. Res. Soc. Proc. 59, Pittsburgh, PA 1986) p. 403. Infra-red Studies of Crystal Defects, (Taylor and Frances LTD, London, 1973).Google Scholar
2)Dornen, A., Sauer, R., and Pensl, G., in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, edited by Mikkelsen, J. C. Jr, Pearton, S. J., Corbett, J. W. and Pennycook, S. J., (Mater, Res. Soc. Proc. 59, Pittsburgh, PA 1986) p. 545.Google Scholar
3)Stein, H. J., in Silicon Nitride and Silicon Dioxide Thin Insulating Films, edited by Kapoor, V. J. and Hankins, K. T., (The Electrochem. Soc. Inc. Proc. 87–10, Pennington, NJ 1987) p. 429.Google Scholar
4)Hemment, P. L. F.; Vasudev, P. K.; and Davis, G., presented at 1987 SOS/SOI Technology Workshop, Durango, CO, 1987 (unpublished).Google Scholar
5) ASTM F121–83, ASTM F123–83; Itoh, Y., Nozaki, T., Masui, T. and Abe, T., Appl. Phys. Lett. 47, 488 (1985).Google Scholar
6)Stein, H. J., J. Electrochem. Soc. 132, 668 (1985); in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett and S. J. Pennycook, (Mater. Res. Soc. Proc. 59, Pittsburgh, PA 1987) p. 523.Google Scholar
7)Stein, H. J., in Matls. Sci. Forum, Defects in Semiconductors III, edited by von Bardeleben, H. J., (Trans Tech Pub., Aedermannsdorf, Switzerland, 1986) p. 935.Google Scholar
8)Henry, A., Pautrat, J. L. and Samindayar, K., in Matls. Sci. Forum, Defects in Semiconductors III, edited by vonBardeleben, H. J., (Trans Tech Pub., Aedermannsdorf, Switzerland, 1986) p. 985.Google Scholar
9)Josquin, W. J. M. J., Nucl. Inst. and Methods, 209/210, 581 (1983).Google Scholar
10)Stein, H. J., in Ion Implantation in Semiconductors, Proc. II Intl. Conf., Garmisch-Partenkirchen, edited by Ruge, I. and Graul, J. (Berlin: Springer-Verlag, 1971) p. 2Google Scholar