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Interaction Between Deposited Film Extrinsic Gettering and Intrinsic Gettering in CZ Silicon During Simulated CMOS Process Cycles

Published online by Cambridge University Press:  28 February 2011

S. Hahn ,
C.-C. D. Wong ,
F. A. Ponce  and
Z. U. Rek
S. Hahn
Affiliation:
Siltec Corporation, Mountain View, California 94043
C.-C. D. Wong
Affiliation:
IDT, Santa Clara, CA 95051
F. A. Ponce
Affiliation:
Xerox PARC, Palo Alto, CA 94304
Z. U. Rek
Affiliation:
SSRL, Stanford, CA 94304
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Abstract

The gettering effectiveness of various thin film structures on n-type CZ silicon wafers has been investigated using electron microscopy, synchrotron radiation topography and optical techniques. Polysilicon, silicon nitride, and poly/nitride films were deposited on etched wafer backsurfaces. The various materials characteristics were correlated with gate oxide breakdown voltage, minority carrier lifetime and yield of MOS capacitors. These studies show that the poly/nitride configuration is superior as a gettering technique.

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References

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