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Integrated Rapid Thermal CVD Processing Solutions for 0.18–0.25μm Technologies

Published online by Cambridge University Press:  10 February 2011

H. Gilboa ,
Y. E. Gilboa ,
Z. Atzmon ,
S. Levy ,
H. Spilberg ,
E. Bransky ,
Z. Doitel ,
R.P.S. Thakur ,
R. A. Weimer  and
S. Deboer
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H. Gilboa
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
Y. E. Gilboa
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
Z. Atzmon
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
S. Levy
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
H. Spilberg
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
E. Bransky
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
Z. Doitel
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
R.P.S. Thakur
Affiliation:
Micron Technology Inc., 8000 S. Federal Way Road, Boise, ID 83707
R. A. Weimer
Affiliation:
Micron Technology Inc., 8000 S. Federal Way Road, Boise, ID 83707
S. Deboer
Affiliation:
Micron Technology Inc., 8000 S. Federal Way Road, Boise, ID 83707
J. Pan
Affiliation:
Micron Technology Inc., 8000 S. Federal Way Road, Boise, ID 83707
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Abstract

The evolution of integrated single-wafer processing for high-temperature applications in the front end of the line (FEOL) occurred with the advancements in single-wafer rapid thermal processing and its acceptance as a manufacturing technology. The Integra RTCVD cluster tool for high-temperature applications features wafer cleaning, rapid thermal processing and single wafer chemical vapor deposition steps. The paper presents integrated vapor phase clean and RTCVD applications for FLASH memory gate stack and DRAM cell.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 215
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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