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Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation

Published online by Cambridge University Press:  01 February 2011

Kazuki Nomoto ,
Tomo Ohsawa ,
Masataka Satoh  and
Tohru Nakamura
Kazuki Nomoto
Affiliation:
nomo@gs-eng.hosei.ac.jp, Hosei Univ., EECE, 3-11-15, Midoricho, Koganei, Tokyo, 1840004, Japan, +81-42-387-5104, +81-42-387-5121
Tomo Ohsawa
Affiliation:
tomo.ohsawa.mp@gs-eng.hosei.ac.jp, Hosei University, Department of EECE and Research Center for Micro-Nano Technology, Tokyo, 1840003, Japan
Masataka Satoh
Affiliation:
mah@ionbeam.hosei.ac.jp, Hosei University, Department of EECE and Research Center for Micro-Nano Technology, Tokyo, 1840003, Japan
Tohru Nakamura
Affiliation:
tohru@hosei.ac.jp, Hosei University, Department of EECE and Research Center for Micro-Nano Technology, Tokyo, 1840003, Japan
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Abstract

Multiple ion-implanted GaN/AlGaN/GaN high electron-mobility transistors (HEMTs) and preciously controlled ion-implanted resistors integrated on silicon substrate are reported. Using ion implantation into source/drain (S/D) regions, the performances were significantly improved. On-resistance reduced from 10.3 to 3.5 Ω•mm. Saturation drain current and maximum transconductance increased from 390 to 650 mA/mm and from 130 to 230 mS/mm. Measured transfer curve shows that I/O gain of 4.5 can be obtained at Vdd = 10 V.

Keywords

III-Vdevicesion-implantation

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References

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