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Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues

Published online by Cambridge University Press:  22 February 2011

T. Yasuda  and
G. Lucovsky
T. Yasuda
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

We report a dual-function chamber integrating (a) remote RF plasma-enhanced etching of SiO2 layers on Si(100) surfaces with low energy, <100 eV, ion bombardment and (b) in-situ removal of polymeric C-F residues that are formed on the exposed Si surfaces. Using direct plasma excitation of He and downstream introduction of CF4, an SiO2 etch rate of ̃5 nm/min was obtained at a CF4 partial pressure as low as 0.25 mTorr. An exposure to atomic-H at a substrate temperature of 250°C was effective in removing polymeric residues from the Si surface, while an exposure to reactive O-species was less effective. We achieved a low-temperature, ̃300°C, homoepitaxial growth of Si on the Si(100) surface that was subjected to plasma etching followed by an exposure to atomic-H. The electrical damage of the processed Si surfaces was evaluated by a new technique, where a device-quality SiO2 film was deposited on this surface by remote PECVD and the C-V characteristics of the MOS structure were measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 523
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] For example, Lynch, W. T., 1987 IEDM Technical Digest (IEEE, New York, 1987), p. 354 Google Scholar
[2] Lucovsky, G., Tsu, D. V., Rudder, R. A., and Markunas, R. J., This Film Processes II, edited by Vossen, J. L. and Kern, E. (Academic Press, San Diego, 1991), p. 565 Google Scholar
[3] Schneider, T. P., Bernhard, B. L., Chen, Y. L., and Nemanich, R. J., MRS Symp. Proc. 259 (1992)Google Scholar
[4] Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett., 60, 434 (1992): MRS Symp. Proc. 238 (1992) in pressGoogle Scholar
[5] Yasuda, T. and Lucovsky, G., submitteed to J. Vac. Sci. Technol.Google Scholar
[6] Heinecke, R. A. H., Solid-State Electron., 18, 1146 (1975)Google Scholar
[7] Simko, J. P. and Oehrlein, G. S., J. Electrochem. Soc., 138, 2748 (1991)Google Scholar
[8] Coburn, J. W., J. Appl. Phys., 50, 5210 (1979); Plasma Etching and Reactive ion Etching, Americam Vacuum Society Monograph Series (American Institute of Physics, New York, 1982), p. 40Google Scholar
[9] Schneider, T. P., Cho, J., Vander Weide, J., Wells, S. E., Lucovsky, G., Nemanich, R. J., Mantini, M. J., Rudder, R. A., and Markunas, R. J., MRS Symp. Proc., 204, 333 (1991)Google Scholar
[10] Habermehl, S. and Lucovsky, G., unpublished dataGoogle Scholar
[11] Tin, C. C., Lin, T. H., and Tzeng, Y., J. Electrochem. Soc., 138, 3094 (1991)Google Scholar
[12] Mu, X. C., Fonash, S. J., Oehrlein, G. S., Chakravarti, S. N., Parks, C., and Keller, J., J. Appl. Phys., 59, 2958 (1986)Google Scholar
[13] Yasuda, T., Ma, Y., Lucovsky, G., Chen, Y.L., and Maher, D., to be published in J. Vac. Sci. Technol., B11 (1993)Google Scholar
[14] For example, Abe, T. and Nakata, H., Oyobutsuri, 47, 490 (1978)Google Scholar
[15] For example, Misra, D., J. Vac. Sci. Technol., A 10, 301 (1992)Google Scholar
[16] Ma, Y., Yasuda, T., Bjorkman, C. H., and Lucovsky, G., J. Vac. Sci. Technol., A10, 781 (1992)Google Scholar
[17] Froitzheim, H., The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, edited by King, D. A. and Woodruff, D. P. (Elsevier, Amsterdam, 1988), p. 190 Google Scholar