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Instability of Nanocavities in Disordered and Amorphous Silicon Under Ion Irradiation

Published online by Cambridge University Press:  15 February 2011

X. Zhu ,
J.S. Williams  and
J.C. McCallum
X. Zhu
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, CANBERRA ACT 0200, Australia
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, CANBERRA ACT 0200, Australia
J.C. McCallum
Affiliation:
School of Physics, Melbourne University, PARKVILLE, Victoria, Australia
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Abstract

It has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 127
Copyright
Copyright © Materials Research Society 1999

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