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Instability formation in epitaxial SiGe lines under hydrogen annealing

Published online by Cambridge University Press:  06 September 2013

Birgit Seiss ,
Georges Brémond  and
Didier Dutartre
Birgit Seiss
Affiliation:
STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France Université de Lyon, Institut des Nanotechnologies de Lyon (INL –UMR 5270) CNRS-ECL-CPE-INSA Lyon, Bat Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne Cedex, France
Georges Brémond
Affiliation:
Université de Lyon, Institut des Nanotechnologies de Lyon (INL –UMR 5270) CNRS-ECL-CPE-INSA Lyon, Bat Blaise Pascal, 7 Av. Jean Capelle, 69621 Villeurbanne Cedex, France
Didier Dutartre
Affiliation:
STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France
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Abstract

The influence of film thickness and line width on the morphology of epitaxial SiGe was studied after an annealing step. The morphology of 5 nm and 19 nm thick SiGe was characterized in 60-490 nm wide lines which were oriented along <100> on Si (001) substrates. We have shown that the annealed SiGe morphology changed significantly as a function of line width and film thickness. Wide lines of 19 nm thick SiGe showed ridge formation; as the line width was decreased the morphology stabilized and then became unstable with the formation of bulges. The morphology of 5 nm thick SiGe consisted of ridges in wide lines, changed to faceted islands in narrower lines and was stable in the narrowest lines.

Keywords

epitaxymorphologythin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 87 - 92
Copyright
Copyright © Materials Research Society 2013 

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References

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