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In-Situ Observation of Chemical Vapor Deposition of Thin Sige Films by Optical Reflection Interferometry

Published online by Cambridge University Press:  15 February 2011

G. Ritter ,
B. Tillack ,
M. Weidner ,
F. G. Böbel  and
B. Hertel
G. Ritter
Affiliation:
Institute of Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt (Oder), Germany
B. Tillack
Affiliation:
Institute of Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt (Oder), Germany
M. Weidner
Affiliation:
Institute of Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt (Oder), Germany
F. G. Böbel
Affiliation:
Fraunhofer Institute US, Am Weichselgarten 3, D–91058 Erlangen, Germany
B. Hertel
Affiliation:
Fraunhofer Institute US, Am Weichselgarten 3, D–91058 Erlangen, Germany
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Abstract

Chemical Vapor Deposition of Si1-x Gex – films on Si (100) and of polycrystalline Si1-x Gex, layers on SiO2 – coated substrates have been performed at a pressure of 200 Pa in the temperature range of 500°C – 800°C, correspondingly. To observe the growth process and to characterize the growing thin films at deposition conditions an optical reflection interferometer (PYRITIERS) has been used. Comparing the data obtained at growth temperature with ex- situ measurements by spectroscopic ellipsometry the temperature dependence of optical constants of SiGe films have been evaluated. The reflectivity measurements during the deposition process allow to study the quality of the heteroepitaxial film, even in the initial stage of epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 51
Copyright
Copyright © Materials Research Society 1995

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