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In-Situ 1Mev Tem and Hrem Study of the Deformation and the Transformation of Symmetrical Tilt Grain Boundaries in Ge and Si.

Published online by Cambridge University Press:  21 February 2011

Jany. Thibault ,
X. Baillin ,
J. Pelissier ,
J.L. Putaux  and
H.M. Michaud
Jany. Thibault
Affiliation:
CEA/Département de Recherche Fondamentale sur la Matière Condensée/SP2M, Centre d'Etudes Nucléaires, 38054 Grenoble-cedex 9, France member of the CNRS
X. Baillin
Affiliation:
CEA/CEREM/Département d'Etudes des Matériaux, Centre d'Etudes Nucléaires, 38054 Grenoble-cedex 9, France
J. Pelissier
Affiliation:
CEA/CEREM/Département d'Etudes des Matériaux, Centre d'Etudes Nucléaires, 38054 Grenoble-cedex 9, France
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Abstract

The evolution under deformation of symmetrical GBs in Si and Ge has been studied both by in-situ TEM and HREM. The influence of the strain conditions (tension or compression) on the final structure through the entrance of different types of dislocations will be discussed. The influence of the deformation temperature on the multiplicity of the structures has been observed in a particular range of misorientation angles.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 215
Copyright
Copyright © Materials Research Society 1994

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References

References:

1. Baillin, X., Pélissier, J., Bacmann, J.J., Jacques, A., George, A., Phil. Mag, A55, 143, (1987).CrossRefGoogle Scholar
2. Jacques, A., George, A., Baillin, X., Bacmann, J.J., Phil. Mag, A55, 165, (1987).Google Scholar
3. Elkajbaji, M., Thibault-Desseaux, M. J., Phil. Mag, A58, 325, (1988).Google Scholar
4. Baillin, X., Pélissier, J., Jacques, A., George, A., Phil. Mag, A61, 329, (1990).Google Scholar
5. Thibault, J., Putaux, J.L., Jacques, A., George, A., Elkajbaji, M., Microscop, Microan., Microstr. 1, 395, (1990).Google Scholar
6. Michaud, H.M., Thesis, Grenoble,(1991).Google Scholar
7. Putaux, J.L., Thesis, Grenoble, (1991).Google Scholar
8. Thibault, J., Putaux, J.L., Michaud, H.M., Baillin, X., Jacques, A., George, A., Inst. Phys. Conf.,117, 105, (1991).Google Scholar
9. Thibault, J., Putaux, J.L., Jacques, A., George, A., Michaud, H.M., Baillin, X., Mat. Science and Engineering, A16, 93, (1993).Google Scholar
10. Michaud, H.M., Baillin, X., Pélissier, J., Putaux, J.L., Thibault, J., Microscop, Microan., Microstr, 4, 221, (1993).Google Scholar
11. Sutton, A., Vitek, V., Trans. Roy. Soc. London, A309,(a) 1-36, (b) 37-51, (c) 55–68, (1983).Google Scholar
12. Thibault-Desseaux, J., Putaux, J.L., Bourret, A., Kirchner, H.O.K., Jour. de Phys., 50, 2525, (1989).Google Scholar
13 Coujou, A., Lours, P., Caillard, D., Clément, N., Acta Met., 38, 825 (1990).Google Scholar
14. Pélissier, J., Lopez, J.J., Debrenne, P., Electron Microscopy, 4, 30, (1980).Google Scholar
15. Stadelmann, P., Ultramicroscopy, 21, 131, (1987),.Google Scholar
16. Vitek, V., Minonishi, Y., Wang, G., J. de Physique, 46, C4–171, (1985)..Google Scholar
17. Rouviére, J.L., Bourret, A., Polycrystalline Semiconductors, Grain Boundaries and Interfaces, ed. , Möller, , Strunk, , Werner, Proc. in Physics, 35, p 1 and p19, (1989).Google Scholar
18. Vaudin, M.D., Cunningham, B., Ast, D., Scripta Met., 17,, 191, (1983).Google Scholar
19 Bourret, A., Bacmann, J.J., Rev. Phys. Appl., 22, 563, (1987).Google Scholar
20. King, A. H., Chen, Fu-Rong, Mat. Sci. Eng., 66, 227, (1984).Google Scholar
21. Bollmann, W.,Crystal defects and Crystalline Interfaces (Springer, Berlin, 1970); Crystal Lattices, Interfaces, Matrices (W. Bollmann ed., Chemin Vert, CH1234 Pinchat,, Geneva, 1982)CrossRefGoogle Scholar
22. Bacmann, J.J., Gay, M.O., Tournemine, R. de, Scripta Met., 16, 353, (1982).Google Scholar
23. Thibault-Desseaux, J., Putaux, J.L., Jacques, A., Elkajbaji, M., MRS, 122, 293, (1988).Google Scholar
24. George, A., Jacques, A., Baillin, X., Thibault-Desseaux, J., Putaux, J.L..Inst. Phys. Conf, 104,, 349,(1989)Google Scholar
25. Putaux, J.L., Thibault-Desseaux, J., (1990) Jour. de Phys, C1–51, 323.Google Scholar
26. Skrotski, W., Wendt, H., Carter, C. B., Kohlstedt, D., Phil. mag., A57, 383, (1988).Google Scholar
27. Pond, R., in Dislocations in Solids, eds , Nabarro, vol. 8, 1, (1989).Google Scholar
28. Kirchner, H.O.K., Thibault, J., Putaux, J.L., Phil. Mag. Lett., submitted.Google Scholar
29. Mourelatos, S., Ralantoson, N., Delavignette, P., Hairie, A., Hairie, F., Hou, M., Paumier, E., Sutton, A, Thibault, J., IIB92, Mat. Sciences.Forum, 126–128, 253, (1993), Trans. Tech. Publi., eds Kommninou, , Rocher, , Switzerland.Google Scholar