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InGaN/AlGaN Double-Heterostructure Blue Leds

Published online by Cambridge University Press:  21 February 2011

Shuji Nakamura
Shuji Nakamura*
Affiliation:
Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
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Abstract

High-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with a luminous intensity of 1.2 cd were fabricated successfully for the first time. As an active layer, a Zn-doped InGaN layer was used. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6V at 20 mA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 173
Copyright
Copyright © Materials Research Society 1994

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References

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