Hostname: page-component-54dcc4c588-hp6zs Total loading time: 0 Render date: 2025-10-01T23:54:06.410Z Has data issue: false hasContentIssue false
  • English
  • Français

Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

Published online by Cambridge University Press:  15 February 2011

Masanobu Miyao ,
Teruaki Motooka ,
Nobuyoshi Natsuaki  and
Takashi Tokuyama
Masanobu Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
Teruaki Motooka
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
Nobuyoshi Natsuaki
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
Takashi Tokuyama
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
Get access

Abstract

Electronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Trumbore, F.A. (1960) Bell Syst. Tech. J. 39 205 Google Scholar
2. Proc. Laser-Solid Interactions and Laser Processing ed. Ferris, S.D., Leamy, H.J. and Poate, J.M. American Inst. Phys., N.Y., (1979)Google Scholar
3. Miyao, M., Koyanagi, M., Tamura, H., Hashimoto, N. and Tokuyama, T. (1980) Jpn. J. Appl. Phys. Suppl. 19 129 Google Scholar
4. Kohyama, S., Onga, S., Shibata, K. and Iizuka, H. (1980) Jpn. J. Appl. Phys. Suppl. 19 133 Google Scholar
5. Natsuaki, N., Miyazaki, T., Ohkura, M., Nakamura, T., Tamura, M. and Tokuyama, T. this proceedingGoogle Scholar
6. Abram, R.A., Ress, G.J., Wilson, B.L.H. (1978) Advances in Physics 27 799 Google Scholar
7. Spitzer, W.G. and Fan, H.Y. (1957) Phys. Rev. 106 882 Google Scholar
8. Howarth, L.E. and Gilbert, J.F. (1963) J. Appl. Phys. 34 236 Google Scholar
9. Subashiev, J.K., Dubrovskii, G.B. and Kukharskii, A.A. (1964) Sov. Phys. Solid State. 6 830 Google Scholar
10. Chelikowsky, J.R. and Cohen, M.L. (1976) Phys. Rev. B 14 556 Google Scholar