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Infrared and Ion Beam Analysis of SIxN1−x Alloys Grown by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  28 February 2011

E.P. Donovan ,
D.R. Brighton ,
D. Van Vechten  and
G.K. Hubler
E.P. Donovan
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5000
D.R. Brighton
Affiliation:
Materials Research Laboratories, Melbourne, Australia
D. Van Vechten
Affiliation:
Sachs/Freeman Associate at NRL
G.K. Hubler
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5000
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Abstract

Thin films of amorphous SixNl-x alloys were produced by nitrogen ion beam assisted deposition of electron beam evaporated silicon. Infrared reflection spectra were measured in the range 600 to 10000 cm−1. Fringes were observed due to interference between light multiply-reflected from the front surface and film-substrate (single crystal silicon) interface. Similar measurements were performed on films crystallized by post-deposition furnace anneals. Analyses of the reflection spectra were used to obtain refractive index profiles. Profiles were correlated with nitrogen content as measured by Rutherford BackscatterLng Spectometry (RBS) and Auger Electron Spectroscopy (AES). Film adhesion, density, and purity were found to be improved for depositions assisted by nitrogen ion beams (1000 to 25,000 eV) relative to unassisted evaporation, and the index of refraction decreases monotonically with increasing nitrogen content.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 487
Copyright
Copyright © Materials Research Society 1986

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References

1. Borders, J.A. and Beezhold, W. in “Ion Implantation in Semiconductors” eds. Ruge, I. and Grawl, J. (Springer Verlag, NY, 1971) p. 241.CrossRefGoogle Scholar
2. Hubler, G.K., Malmberg, P.R. and Smith, T.P. III, J. Appl. Phys. 50, 7147 (1979).CrossRefGoogle Scholar
3. Hubler, G.K., Malmberg, P.R., Carosella, C.A., Smith, T.P. III, Spitzer, W.G., Waddell, C.N. and Phillippi, C.N.. Radiat. Eff. 48, 81 (1980).CrossRefGoogle Scholar
4. Harper, J.M.E., Cuomo, J.J., Gambino, R.J. and Kaufman, H.R., in Ch. 4 of “Ion Bombardment Modification of Surfaces: Fundamentals and Applications/ (Elsevier, NY, 1984) p. 127–162.Google Scholar
5. Cuomo, J.J., Harper, J.M.E., Guarnieri, C.R., Yee, D.S., Attanasio, L.J. Angile, J. and WU, C.T., J. Vac. Sci. Technol. 20, 349 (1982).CrossRefGoogle Scholar
6. Kant, R.A., Sartwell, B.D., Singer, I.L. and Vardiman, R.G., Nucl. Inst. & Meth. B7/8, 915 (1985).CrossRefGoogle Scholar
7. Vechten, D. Van, Hubler, G.K. and Donovan, E.P., to be published in Vacuum Technical Applications and Ion Physics; presented at Low Energy Ion Beams IV, Brighton, England, Apr. 1986.Google Scholar
8.The authors have used the program RUMP from Cornell University. Doolittle, L.R., Nucl. Inst. and Meth. B9, 344 (1983).Google Scholar
9. Hubler, G.K., Donovan, E.P., Wang, K-W. and Spitzer, W.G., SPIE 530, 222 (1985).Google Scholar