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Infrared Absorption Study of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

P.B. Harwood  and
G.P. Thomes
P.B. Harwood
Affiliation:
Sperry Corporation, Eagan, MN 55121
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Abstract

Data is presented which links the 620 - 660 cm−1 infrared absorption doublet in porous silicon films to the presence of silicon hydride. This band assignment explains both the magnitude and thermal behavior of the doublet, and is in agreement with published data on silicon hydrides.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 369
Copyright
Copyright © Materials Research Society 1986

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References

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