Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-09-16T16:09:28.400Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Thermally-Induced Defects on the Transient Photoconductivity in a-Si:H

Published online by Cambridge University Press:  26 February 2011

A. Werner  and
M. Kunst
A. Werner
Affiliation:
Hahn-Meitner-institut, Bereich Strahlenchemie, D-1000 Berlin 39, Federal Republic of Germany
M. Kunst
Affiliation:
Hahn-Meitner-institut, Bereich Strahlenchemie, D-1000 Berlin 39, Federal Republic of Germany
Get access

Abstract

Contactless transient photoconductivity measurements in intrinsic and n-type a-Si:H were performed at 220 °C and at room temperature where also rapidly quenched films were investigated. In undoped samples the measurements suggest thermally induced structure changes which lead to an increase of the effective electron lifetime. In n-type samples the effective electron lifetime decreases with temperature, what may be explained by an increase of the hole emission rate with temperature.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 303
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1) Müller, G., Kalbitzer, S., and Mannsperger, H., Appl. Phys. A 39, 243 (1986).CrossRefGoogle Scholar
2) Smith, Z E., Wagner, S., and Faughnan, B. W., Appl. Phys. Lett. 46, 1078 (1985).CrossRefGoogle Scholar
3) Kakalios, J. and Street, R. A., Phys. Rev. B 34, 6014 (1986).CrossRefGoogle Scholar
4) Kakalios, J. and Street, R. A., J. of Non-Cryst. Solids 97&98, 767 (1987).CrossRefGoogle Scholar
5) Kunst, M. and Werner, A., J. Appl. Phys. 58, 2236 (1985).CrossRefGoogle Scholar
6) Werner, A., Kunst, M., and Könenkamp, R., Phys. Rev. B 33, 8878 (1986).CrossRefGoogle Scholar
7) Werner, A. and Kunst, M., Phys. Rev. B 36, 7567 (1987).CrossRefGoogle Scholar
8) Tiedje, T., Semiconductors and Semimetals, Vol.21B, edited by Pankove, J. I. (Academic Press, London, 1984) p. 207.Google Scholar
9) Main, C., Russel, R., Berkin, J., and Marshall, J. M., Phil. Mag. Lett. 55, 189 (1987)CrossRefGoogle Scholar
10) Kristensen, J. K. and Hvam, J. M., Solid State Commun. 65, 415 (1988).CrossRefGoogle Scholar
11) Stutzmann, M., Biegelsen, D. K., and Street, R. A., Phys. Rev. B 35, 5666 (1987).CrossRefGoogle Scholar