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Influence of Structural and Electrical Characteristics of Extended Defects on GaAs Field Effect Transistors

Published online by Cambridge University Press:  26 February 2011

M. Van Hove ,
W. De Raedt ,
M. De Potter ,
M. Van Rossum  and
J. L. Weyher
M. Van Hove
Affiliation:
IMEC v.z.w., Kapeldreef 75, 3030 Leuven, Belgium
W. De Raedt
Affiliation:
IMEC v.z.w., Kapeldreef 75, 3030 Leuven, Belgium
M. De Potter
Affiliation:
IMEC v.z.w., Kapeldreef 75, 3030 Leuven, Belgium
M. Van Rossum
Affiliation:
IMEC v.z.w., Kapeldreef 75, 3030 Leuven, Belgium
J. L. Weyher
Affiliation:
Catholic University, Faculty of Science, Solid State Physics III Toemooiveld, 6525 ED Nijmegen, The Netherlands
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Abstract

The paper presents a systematic study of grown-in and process-induced defects on LEC GaAs substrates. Defects have been revealed by photoetching the wafers with diluted Sirti-like solutions after various processing steps. MESFET arrays have been processed on the wafers and a systematic mapping of the I-V characteristics has been performed. A correlation between various defect configurations and the FET threshold voltage shifts has been established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 457
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Weyher, J.L. and van de Ven, J., J. Cryst. Growth 63, 285 (1983).Google Scholar
2.van de Ven, J., Weyher, J.L., van den Meerakker, J.E.A.M. and Kelly, J.J., J. Electrochem. Soc. 133, 799 (1986)Google Scholar
3.de Potter, M., De Raedt, W., Van Hove, M., Van Rossum, M. and Weyher, J.L., to be published in Proceedings of 1987 E-MRS ConferenceGoogle Scholar
4.Weyher, J.L., Dang, Le Si and Visser, E.P., to be published in the Proceedings of the 1987 Symposium on GaAs and Related CompoundsGoogle Scholar
5. See e.g. “Modern Crystallography III” (ed. A.A. Chemov), Springer-Verlag, 243 (1984).Google Scholar
6.De Schoenmaker, D., Meuris, M., Van Rossum, M., Van Landuyt, J., Maes, H., Proc. XIth Int. Cong. on Electron Microscopy, 1077 (Kyoto 1986).Google Scholar
7.Miyazawa, S. and Hyuga, F., IEEE Trans. on Electron Devices 33, 277 (1986)Google Scholar
8.Egawa, T., Sano, Y., Nakamura, H. and Kaminishi, K., Jpn. J. of Appl. Phys. 25. L973, (1986)Google Scholar
9.Suchet, P., Duseaux, M., Maluenda, J. and Martin, G.M., J. Appl. Phys. 62, 1097 (1987)Google Scholar
10.Kitching, S.A., to be published in the Proceedings of the 1987 E-MRS ConferenceGoogle Scholar
11.Miyazawa, S. and Wada, K., Appl. Phys. Lett. 48, 905 (1986)Google Scholar