Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-05T15:06:55.276Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Nitrogen Content on the Properties of Sputtered a-Si56Ge44:N:H Films

Published online by Cambridge University Press:  21 February 2011

T. Drusedau
T. Drusedau*
Affiliation:
FB Physik der Universitat Kaiserslautern, Postfach 3049, W—6750 Kaiserslautern, (on leave from: Inst. Exp. Physik der TU “Otto von Guericke”, PSF 124, O—3010 Magdeburg), Fed. Rep. of Germany
Get access

Abstract

Nitrogen related absorption bands of the IR spectra are used to determine the content of nitrogen and N—H bonds in a—Si56 Ge44 films. A preferential attachment of nitrogen to silicon is observed. Nitrogen incorporation enhances the normalized photoconductivity to 5 · 107 cm2/V at maximum. This is related to N—H complexes acting as donors. A correlation between optical gap and single oscillator energy is reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 799
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Mackenzie, K.D., Eggert, J.R., Leopold, D.J., Li, Y.M., Lin, S., Paul, W., Phys. Rev. B 31 2198(1985).Google Scholar
[2] Stutzmann, M., Street, R.A., Tsai, C.C., Boyce, J.B., Ready, S.E., J. Appl. Phys. 66 569(1989).CrossRefGoogle Scholar
[3] Rudder, R.A., Cook, J.W., Lucovsky, G., J. Vac. Sci. Technol. A 3 567(1985).Google Scholar
[4] Schroder, B., Leidner, M., Oechsner, H., this conference.Google Scholar
[5] Saito, N., Aoki, K., Sannomiya, H., Yamaguchi, T., Thin Solid Films 115 253(1984).Google Scholar
[6] Kumeda, M., Tsujimura, Y., Yonezwawa, Y., Morimoto, A., Shimizu, T., Solid State Commun. 55 409(1985).Google Scholar
[7] Drvisedau, T., Jager, S., Fiedler, H., Sobotta, H., Riede, V., Bottcher, R., Witzmann, A., J. Non-Crystalline Solids, 127 165(1991).Google Scholar
[8] Banerjee, P.K., Pereira, J.M.T., Hanidu, G.A., Mitra, S.S., J. Non-Crystalline Solids 94 261(1987).Google Scholar
[9] Drusedau, T., Fiedler, H., Sobotta, H., Riede, V., submitted to J. Non—Crystalline Solids.Google Scholar
[10] Wemple, S.H., DiDomenico, M., Phys. Rev. B 3 1338(1971).Google Scholar
[11] Mackenzie, K.D., Paul, W., J. Non-Cryst. Solids 97&98 1055(1987).Google Scholar
[12] Marques, F.C., Chambouleyron, I., Evangelisti, F., J. Non-Crystalline Solids 114 561(1989).CrossRefGoogle Scholar
[13] Guanghua, Chen, Fanqing, Zhang, Thin Solid Films 185 231(1990).Google Scholar
[14] Vanier, P.E., Solar Cells 9 85(1983).Google Scholar
[15] Robertson, J., Powell, M.J., in Materials Issues in Applications of Amorphous Silicon Technology, edited by Adler, D., Mandan, A., and Thompson, M.J. (Mater. Res. Soc. Proc. 49, Pittsburgh, PA 1985) pp. 215.Google Scholar
[16] Davis, E.A., Piggins, N., Bayliss, S.C., J. Phys. C 20 4415(1987).CrossRefGoogle Scholar